STH6N100 STH6N100fi n - channel enhancement mode power mos transistor n typical r ds(on) = 1.75 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low input capacitance n low gate charge n application oriented characterization applications n high current, high speed switching n switch mode power supplies (smps) n consumer and industrial lighting n dc-ac inverters for welding equipment and uninterruptible power supply (ups) internal schematic diagram type v dss r ds(on) i d STH6N100 STH6N100fi 1000 v 1000 v < 2 w < 2 w 6 a 3.7 a 1 2 3 to-218 isowatt218 december 1996 absolute maximum ratings symbol parameter value unit STH6N100 STH6N100 v ds drain-source voltage (v gs = 0) 1000 v v dgr drain- gate voltage (r gs = 20 k w )1000v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c63.7a i d drain current (continuous) at t c = 100 o c3.7 2.3a i dm ( ) drain current (pulsed) 24 24 a p tot total dissipation at t c = 25 o c18070w derating factor 1.44 0.56 w/ o c v iso insulation withstand voltage (dc) ? 4000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area 1 2 3 1/10
thermal data to-218 isowatt218 r thj-case thermal resistance junction-case max 0.69 1.78 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 6a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 850 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 16 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 3.7 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 1000 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 25 250 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v i d = 3 a 1.75 2 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 6a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds > i d(on) x r ds(on)max i d = 3 a 4 5.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 2150 260 105 2800 330 130 pf pf pf STH6N100/fi 2/10
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 500 v i d = 3 a r g = 50 w v gs = 10 v (see test circuit, figure 3) 70 210 90 280 ns ns (di/dt) on turn-on current slope v dd = 800 v i d = 6 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 180 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v i d = 6 a v gs = 10 v 125 15 55 150 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 800 v i d = 6 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 190 50 265 250 65 345 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 6 24 a a v sd ( * ) forward on voltage i sd = 6 a v gs = 0 2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circuit, figure 5) 1100 31 57 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating areas for to-218 safe operating areas for isowatt218 STH6N100/fi 3/10
thermal impedeance for to-218 derating curve for to-218 output characteristics thermal impedance for isowatt218 derating curve for isowatt218 transfer characteristics STH6N100/fi 4/10
transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature normalized gate threshold voltage vs temperature STH6N100/fi 5/10
turn-on current slope turn-off drain-source voltage slope cross-over time switching safe operating area accidental overload area source-drain diode forward characteristics STH6N100/fi 6/10
fig. 2: unclamped inductive waveforms fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode reverse recovery time fig. 1: unclamped inductive load test circuits STH6N100/fi 7/10
dim. mm inch min. typ. max. min. typ. max. a 4.7 4.9 0.185 0.193 c 1.17 1.37 0.046 0.054 d 2.5 0.098 e 0.5 0.78 0.019 0.030 f 1.1 1.3 0.043 0.051 g 10.8 11.1 0.425 0.437 h 14.7 15.2 0.578 0.598 l2 C 16.2 C 0.637 l3 18 0.708 l5 3.95 4.15 0.155 0.163 l6 31 1.220 r C 12.2 C 0.480 ? 4 4.1 0.157 0.161 r a c d e h f g l6 ? l3 l2 l5 1 2 3 to-218 (sot-93) mechanical data p025a STH6N100/fi 8/10
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.45 1 0.017 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u 4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 isowatt218 mechanical data p025c STH6N100/fi 9/10
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1996 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the n etherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . STH6N100/fi 10/10
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